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Publication

Time-Domain Spin-Transfer Torque Induced Magnetic Tunnel Junction Reversal Dynamics - Pathways for Fast Spin-Logic Applications

Book - Dissertation

The recent developments in spin-transfer torque switching (STT) of nanomagnets in magnetic tunnel junction (MTJ) devices has made them very successfull in memory applications. On the other hand, the magnetic domain can not only be used as a reliable storage space, but also as a low-power information conduit for logic applications. In this thesis, we explore pathways towards fast transduction between electrical and magnetic domain using MTJ's for such applications.Through study of the time-dependent reversal dynamics of devices, we lay their physics bare. We study how long term retention can be traded for write speed through the introduction of a canted free-layer concept, and how MTJ's can be utilized to interface with possibly novel domain wall track materials via a hybrid free-layer approach. Lastly, the time-domain studies are a powerful tool to consider some reliability issues partaining to back-hopping
Publication year:2021
Accessibility:Open