Effects of radiation on state-of-the-art CMOS image sensors

A lot of progress has been made on the understanding of radiation effects on CMOS image sensors (CIS). However, this is limited to pixels operating in a “rolling shutter” mode and with a classic 3-transistor or 4-transistor pixel topology. Meanwhile many new process steps were introduced in CIS technology which have effects on radiation tolerance (like backside illumination or deep trench isolation) and several new pixel architectures have been proposed, like global shutter pixels and pixels for Time-of-Flight (TOF) 3D imaging. Little is known yet on the radiation tolerance of devices using these latest technologies. This project aims to perform the first steps in radiation assessment of these latest generation of pixel architectures and CIS technologies, based upon standard devices. It hopes to trigger follow-on projects in the field of global shutter and time-of-flight imagers.

Keywords:CMOS image sensor, Pixel, radiation-tolerant CMOS

Disciplines:Analogue, RF and mixed signal integrated circuits, Electronic circuit and system reliability, Telecommunication and remote sensing