Novel magnetic tunnel junction concept for spin logic application

Spin logic devices based on domain-wall (DW) motion offer flexible architectures to store and carry logic information in a circuit. In this device concept, logic information is encoded in the magnetic state of a magnetic track shared by multiple magnetic tunnel junctions (MTJs) and is processed by DW motion. Such devices combine unique properties such as non-volatility, fast operation, and ultra-low energy consumption. At imec, a novel concept of MTJ device has recently been developed and demonstrated, enabling a synthetic antiferromagnet as magnetic free layer into the MTJ devices. This novel design is promising thanks to the special properties of synthetic antiferromagnetic materials (robust against external fields, no stray fields and ultra-high DW speed) compared to conventional ferromagnetic layers. The purpose of this project is to pave the way towards the integration of this novel MTJ concept in a viable technological process for spin logic applications. It focuses on the understanding of the physical mechanisms of DW dynamics in nanoscale devices and on designing and investigating fully functional spin logic devices.