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Publication

Reliability of p-GaN gate HEMTs in reverse conduction

Journal Contribution - Journal Article

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES

ISSN: 1557-9646

Issue: 2

Volume: 68

Pages: 645 - 652

Publication year:2021

DOI: https://doi.org/10.1109/ted.2020.3042134
Handle: http://hdl.handle.net/1854/LU-8715699
WoS Id: 000612147300031

Accessibility:Closed

See also: Reliability of p-GaN Gate HEMTs in Reverse Conduction