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Publication
Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions
Journal Contribution - Journal Article
Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Issue: 4
Volume: 68
Pages: 1454 - 1460
Publication year:2021
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Government, Higher Education
Accessibility:Open