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Publication
Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics
Journal Contribution - Journal Article
Journal: IEEE Transactions on Power Electronics
ISSN: 0885-8993
Issue: 5
Volume: 36
Pages: 4927 - 4930
Publication year:2021
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:6
CSS-citation score:2
Authors from:Government, Higher Education
Accessibility:Open