< Back to previous page

Publication

Signature of ballistic band-tail tunneling current in tunnel FET

Journal Contribution - Journal Article

To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in the transfer and output characteristics of the TFETs. In particular, we demonstrate that the temperature dependence of a BTT-dominated subthreshold swing (SS) is in agreement with the reported experimental results. We explain how the temperature dependence of the output characteristics can be used to distinguish between a current dominated by BTT and a current dominated by trap-assisted tunneling. Finally, we propose an expression that relates the energetic extension of the quasi-extended BT states in the bandgap to the onset voltage for tunneling.
Journal: IEEE transactions on electron devices
ISSN: 0018-9383
Volume: 67
Pages: 3486 - 3491
Publication year:2020
Keywords:A1 Journal article
BOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors from:Government
Accessibility:Closed