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Publication
Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration
Journal Contribution - Journal Article
Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Issue: 2
Volume: 68
Pages: 464 - 470
Publication year:2021
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors from:Government, Higher Education
Accessibility:Open