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Publication

Reliability of p-GaN Gate HEMTs in Reverse Conduction

Journal Contribution - Journal Article

Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Issue: 2
Volume: 68
Pages: 645 - 652
Publication year:2021
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors from:Government, Higher Education
Accessibility:Open

Authors/publisher

  • Deepthi Cingu (First author)
  • Xiangdong Li (Author)
  • Benoit Bakeroot (Author)
  • Nooshin Amirifar (Author)
  • Karen Geens (Author)
  • Kristof JP Jacobs (Author)
  • Ming Zhao (Author)
  • Shuzhen You (Author)
  • Guido Groeseneken (Author)
  • Stefaan Decoutere (Last author)

Research units