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Publication
Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration
Journal Contribution - Journal Article
Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Issue: 11
Volume: 67
Pages: 4827 - 4833
Publication year:2020
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Government, Higher Education
Accessibility:Open