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Publication
Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
Journal Contribution - Journal Article
Journal: Microelectronics Reliability
ISSN: 0026-2714
Volume: 115
Publication year:2020
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Government, Private, Higher Education
Accessibility:Open