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Project

Directed self-assembly of block copolymers for complementing extreme ultraviolet lithography

Further downscaling of integrated circuit components requires semiconductor industry to innovate as the current workhorse, i.e. 193 nm immersion lithography, is reaching its limits. Single exposure EUV lithography (13.5 nm) is quickly advancing as next generation lithography method. However, the energy increase complicates conventional resist patterning and introduces significant line roughness and non-uniformity in the resist patterns leading to device failure. Therefore, we propose a new, completely resist-free patterning technology based on block copolymer (BCP) directed self-assembly to complement EUV lithography. An EUV exposed photosensitive underlayer will be developed first to induce specific orientational and translational order in a BCP pattern. Afterwards, this lower-quality chemical pre-pattern will guide the self-assembly process of the BCP to obtain the desired line-space or hexagonal hole patterns for semiconductor construction. Important to note is that the pattern roughness and uniformity will now mainly depend on the BCP material characteristics. In the first place, conventional PS-b-PMMA will be used, but later a switch will be made to high-chi BCP materials to achieve even smaller dimensions and/or improved roughness/uniformity. In all steps, the process conditions will be optimized, also to bring the defectivity level to a minimum.

Date:1 Oct 2020 →  Today
Keywords:EUV lithography, semiconductor industry, self-assembled monolayers, molecular grafting, characterization of surface and thin films
Disciplines:Nanofabrication, growth and self assembly, Nanoscale characterisation, Nanometrology
Project type:PhD project