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Publication
A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
Journal Contribution - Journal Article
Journal: 2D Materials
ISSN: 2053-1583
Issue: 3
Volume: 7
Publication year:2020
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:2
CSS-citation score:2
Authors:International
Authors from:Government, Higher Education