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Publication
A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1-xSnx
Journal Contribution - Journal Article
Journal: JOURNAL OF APPLIED PHYSICS
ISSN: 0021-8979
Issue: 19
Volume: 127
Publication year:2020
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Government, Higher Education