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Publication
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
Journal Contribution - Journal Article
Journal: Applied Surface Science
ISSN: 0169-4332
Volume: 515
Publication year:2020
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:2
CSS-citation score:1
Authors:International
Authors from:Government, Higher Education
Accessibility:Closed