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Publication

Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

Book Contribution - Book Chapter Conference Contribution

Book: 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)

Pages: 287 - 290

ISBN:9781728105819

WoS Id: 000484987200070
Handle: http://hdl.handle.net/1854/LU-8652847

BOF-keylabel:yes

IOF-keylabel:yes

Accessibility:Closed