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Publication

Carrier Transport in a Two-Dimensional Topological Insulator Nanoribbon in the Presence of Vacancy Defects.

Book Contribution - Book Chapter Conference Contribution

© 2018 IEEE. We model transport through two-dimensional topological insulator (TI) nanoribbons. To model the quantum transport, we employ the non-equilibrium Green's function approach. With the presented approach, we study the effect of lattice imperfections on the carrier transport. We observe that the topologically protected edge states of TIs are robust against a high percentage (2%) of vacancy defects. We also investigate tunneling of the edge states in two decoupled TI nanoribbons.
Book: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages: 92 - 96
ISBN:9781538667880
Publication year:2018
BOF-keylabel:yes
IOF-keylabel:yes
Authors from:Government, Higher Education