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Publication

Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-kappa Gate Dielectric

Journal Contribution - Journal Article

Journal: IEEE Electron Device Letters
ISSN: 0741-3106
Issue: 4
Volume: 41
Pages: 565 - 568
Publication year:2020
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Government, Higher Education
Accessibility:Closed