An in-depth study of high-performing strained germanium nanowires pFETs

An in-depth study of scaled nanowire Ge pFETs for digital and analog applications is proposed. Improved device characteristics are first obtained after gaining a good understanding of the HPA on device performance. Up to 45% higher ID,SAT is obtained at I_OFF=3nA/fin when comparing to best Si GAA nFET and similar ID,SAT is found when benchmarking to mature 14/16nm pFinFET technology at-0.5 V_DD. The temperature dependent study of I_D,SAT highlights that the mechanism limiting the transport in Ge at short channel are neither purely diffusive nor fully ballistic.