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Publication
MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts
Journal Contribution - Journal Article
Journal: Advanced Functional Materials
ISSN: 1616-301X
Issue: 4
Volume: 30
Publication year:2020
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:10
CSS-citation score:2
Authors:International
Authors from:Government, Higher Education
Accessibility:Closed