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Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides

Journal Contribution - Journal Article

In this paper, we explore the impact of changing the growth conditions on the substrate surface during the metal-organic vapor phase epitaxy of 2D-transition metal dichalcogenides. We particularly study the growth of molybdenum disulfide (MoS2) on sapphire substrates at different temperatures. We show that a high temperature leads to a perfect epitaxial alignment of the MoS2 layer with respect to the sapphire substrate underneath, whereas a low temperature growth induces a 30° epitaxial alignment. This behavior is found to be related to the different sapphire top surface re-arrangement under H2S environment at different growth temperatures. Structural analyses conducted on the different samples confirm an improved layer quality at high temperatures. MoS2 channel-based metal-oxide-semiconductor field-effect transistors are fabricated showing improved device performance with channel layers grown at high temperature.
Journal: Nanotechnology
ISSN: 0957-4484
Issue: 12
Volume: 31
Publication year:2020
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:2
Authors:International
Authors from:Government, Higher Education
Accessibility:Closed