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Publication
Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates
Journal Contribution - Journal Article
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN: 1557-9646
Issue: 4
Volume: 66
Pages: 1849 - 1855
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:0.1
CSS-citation score:2
Authors:International
Authors from:Government
Accessibility:Closed