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Publication

Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction

Journal Contribution - Journal Article Conference Contribution

Journal: 19TH INTERNATIONAL CONFERENCE ON EXTENDED DEFECTS IN SEMICONDUCTORS (EDS2018)
ISSN: 1742-6588
Volume: 1190
Publication year:2019
BOF-keylabel:yes
IOF-keylabel:yes
Authors from:Government, Higher Education