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Publication

The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

Journal Contribution - Journal Article

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN: 1557-9646
Issue: 1
Volume: 66
Pages: 372 - 377
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:0.1
CSS-citation score:2
Authors:International
Authors from:Private
Accessibility:Closed