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Publication
Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
Journal Contribution - Journal Article
Journal: JOURNAL OF APPLIED PHYSICS
ISSN: 0021-8979
Issue: 21
Volume: 125
Publication year:2019
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors:International
Authors from:Higher Education
Accessibility:Open