Switching behavior of HfO2-based resistive RAM with vertical CNT bottom electrode

© 2017 IEEE. We demonstrate a CMOS compatible process flow for making scaled Hafnium Oxide (HfO2) based resistive switching random access memory (RRAM) with Vertical multiwalled Carbon Nanotubes (V-CNT) as bottom electrode(BE). While the bipolar resistive switching characteristics are similar to TiN\HfO2RRAM, the V-CNT\HfO2device shows deeper RESET enabling a high On-Off ratio (>104) at low switching currents (10 μA). It operates at higher SET and RESET voltages, but exhibits excellent high temperature retention (>106 s @200oC). These results suggest that the V-CNT bottom electrode plays an active role in the resistive switching process.

ISBN:9781509032723

Publication year:2017

BOF-keylabel:yes

IOF-keylabel:yes

Authors from:Government, Higher Education