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Publication

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n plus InAs(Si)/p plus GaSb(Si) Esaki diode

Journal Contribution - Journal Article

Journal: Journal of Crystal Growth

ISSN: 0022-0248

Volume: 484

Pages: 86 - 91

Publication year:2018

Institutional Repository URL: https://lirias.kuleuven.be/2189890
DOI: https://doi.org/10.1016/j.jcrysgro.2017.12.035
WoS Id: 000419570700014