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Monolithically Integrated 1 TFT-1RRAM Non-Volatile Memory Cells Fabricated on PI Flexible Substrate

Book Contribution - Book Chapter Conference Contribution

This paper presents an integrated, 1-transistor 1-RRAM cell based on amorphous InGaZnO flexible thin-film transistor technology. Both elements of the memory cell have been integrated side-by-side in a monolithic fashion on a flexible polyimide substrate. The thin-film transistor technology shows good uniformity figures, with a minimal channel length of 5 mu. The non-volatile memory technology is based on TaOx as material for Resistive Random Access Memory. The integratedalable memory device measures 5x5 mu2 and results in a memory window of 7.76.
Book: 48th European Solid-State Device Research Conference (ESSDERC)
Pages: 66 - 69
ISBN:9781538654019
Publication year:2018
Accessibility:Open