Researcher
Eddy Simoen
- Keywords:Earth sciences and geography
Publications
1 - 10 of 12
- Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C(2021)
Authors: P. G.D. Agopian, G. J. Carmo, Jonathan Martino, Eddy Simoen, U. Peralagu, Bertrand Parvais, N. Waldron, Nadine Collaert
- Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors(2021)
Authors: Maria Glória Caño de Andrade, Luis Felipe de Oliveira Bergamim, Braz Baptista Júnior, Carlos Roberto Nogueira, Fábio Alex da Silva, Kenichiro Takakura, Bertrand Parvais, Eddy Simoen
- Analog performance of GaN/AlGaN high-electron-mobility transistors(2021)
Authors: Luis Felipe de Oliveira Bergamim, Bertrand Parvais, Eddy Simoen, Maria Glória Caño de Andrade
- Defect engineering for monolithic integration of III-V semiconductors on silicon substrates(2021)Edition: 4Series: ECS Transactions
Authors: Eddy Simoen, P. C. Hsu, K. Takakura, O. Syshchyk, A. Vais, Hong Yu, Bertrand Parvais, N. Collaert, Charlotte Claeys
Pages: 53-62Number of pages: 10 - Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications(2020)Series: 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
Authors: Eddy Simoen, Po Chun Brent Hsu, Hao Yu, Hongyue Wang, Ming Zhao, Kenichiro Takakura, Vamsi Putcha, Uthayasankaran Peralagu, Bertrand Parvais, N. Waldron, et al.
Number of pages: 3 - From 5G to 6G(2020)Series: 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
Authors: Nadine Collaert, A. Alian, A Banerjee, V. Chauhan, Rana Yasser Gomaa Mohamed Elkashlan, Po Chun Brent Hsu, M. Ingels, A. Khaled, K. Vondkar Kodandarama, Bernardette Kunert, et al.
Number of pages: 3 - Technology Impact on the Low Frequency Noise of Si and Si/SiGe Superlattice Input-Output FinFETs(2020)Series: 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
Authors: Cor Claeys, Geert Hellings, Hiroaki Arimura, Bertrand Parvais, L. A. Ragnarsson, Harold Dekkers, Tom Schram, Dimitri Linten, Naoto Horiguchi, Eddy Simoen, et al.
Number of pages: 2 - Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation(2020)
Authors: K. Takakura, V. Putcha, Eddy Simoen, A. R. Alian, U. Peralagu, N. Waldron, Bertrand Parvais, Nadine Collaert
Pages: 3062-3068 - Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors(2020)
Authors: K. Takakura, V. Putcha, Eddy Simoen, A. Alian, U. Peralagu, N. Waldron, Bertrand Parvais, Nadine Collaert
- CMOS-compatible GaN-based devices on 200mm-Si for RF applications(2019)Series: Technical Digest - International Electron Devices Meeting, IEDM
Authors: U. Peralagu, Brice De Jaeger, Daniel M. Fleetwood, Piet Wambacq, Mandi Zhao, Bertrand Parvais, N. Waldron, Nadine Collaert, A. Alian, V. Putcha, et al.
Pages: 17.2.1-17.2.4