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Doped GeSe materials for selector applications
Book Contribution - Book Chapter Conference Contribution
© 2017 IEEE. We report on the thermal and electrical performance of nitrogen (N) and carbon (C) doped GeSe thin films for selector applications. Doping of GeSe successfully improved its thermal stability to 450°C. N doping led to a decrease in the off-state leakage and an increase in threshold voltage (Vth), while C doping led to an increase in leakage and reduced Vth. Hence, we show an effective method to tune the electrical parameters of GeSe selectors by using N and C as dopants.
Book: 47th European Solid-State Device Research Conference - ESSDERC
Pages: 168 - 171
ISBN:9781509059782
Publication year:2017
BOF-keylabel:yes
IOF-keylabel:yes
Authors from:Government, Higher Education
- See also: Doped GeSe materials for selector applications