Measurement of the apex temperature of a nanoscale semiconducting field emitter illuminated by a femtosecond pulsed laser

© 2018 Author(s). Evaluating the thermal processes occurring inside an illuminated nanoscale semiconducting tip is of utmost importance for the physical understanding of laser assisted atom probe tomography (L-APT). In this paper, we present a methodology to evaluate the temperature at the apex of the tip using L-APT. The method is based on the known exponential dependence of the probability for field evaporation on the temperature and the electric field at the apex. We use this method to gain insights into the effect of tip shape, doping, and laser power on the peak temperature reached at the apex of an illuminated Si tip.

Publication year:2018

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Authors from:Government, Higher Education

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