A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From –, –, and – Measurements

We present a defect spectroscopy technique to profile the energy and spatial distribution of defects within a material stack from leakage current (J–V), capacitance (C–V), and conductance (G–V) measurements. The technique relies on the concept of sensitivity maps (SMs) that identify the bandgap regions, where defects affect those electrical characteristics. The information provided by SMs are used to reproduce J–V, C–V, and G–V data measured at different temperatures and frequencies by means of physics-based simulations relying on an accurate description of carrier-defect interactions. The proposed defect spectroscopy technique is applied to ZrO2-based metal–insulator–metal structures of different compositions for dynamic random-accessmemory capacitorapplications. The origin of the observed voltage, temperature, and frequency dependencies of the I–V, C–V, and G–V data is understood, and the atomic structure of the relevant stack defects is identified.

Publication year:2019

BOF-keylabel:yes

IOF-keylabel:yes

BOF-publication weight:1

CSS-citation score:1

Authors:International

Authors from:Government, Higher Education

Accessibility:Open