Germanium-related deep electron traps in ALD-grown HfO2 insulators studied through Exhaustive PhotoDepopulation Spectroscopy

© 2015 Elsevier B.V.All rights reserved. Energy distribution of deep gap states related to incorporation of Ge impurity into insulating HfO2 is characterized using Exhaustive Photo-Depopulation Spectroscopy technique. While the undoped (Ge-free) HfO2 layers exhibit a 1-eV broad distribution of acceptor states (electron traps) centered at 2 eV below the oxide conduction band, incorporation of Ge gives rise to additional acceptor levels with the energy depth of about 3 eV. At the same time, a measurable density of donor states (hole traps) is found neither in the Ge-free nor in the Ge-doped HfO2 layers.

Publication year:2015

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Authors:International

Authors from:Higher Education

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