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Ultra-Low Voltage Datapath Blocks in 28nm UTBB FD-SOI

Book Contribution - Book Chapter Conference Contribution

This paper demonstrates a wide supply range multiply-accumulate datapath block in 28nm UTBB FD-SOI technology. Variability and leakage reduction strategies are employed in this new technology to achieve a state-of-the-art low energy performance. The design uses a wide range of supply voltages to reduce energy consumption per operation. The extensive back-gate biasing range allows to adapt the minimum energy point (MEP) of the circuit to the desired workload. Measurements showcase the speed/energy trade-off of both the design and the technology and lead to a MEP of 0.17pJ at 35MHz with a supply voltage of 250mV and a back-gate bias of 0.5V.
Book: Proceedings of the IEEE Asian Solid State Circuits Conference (A-SSCC)
Pages: 49 - 52
ISBN:9781479940905
Publication year:2014
BOF-keylabel:yes
IOF-keylabel:yes
Authors from:Higher Education
Accessibility:Open