Improving MOCVD MoS2 Electrical Performance: Impact of Minimized Water and Air Exposure Conditions

© 2012 IEEE. The effects of oxidants both in the channel and contact regions of MoS2transistors are discussed through a systematic experimental study. This letter highlights the issues of partial instability in metal-organic chemical vapor deposition MoS2and proposes a procedure, which considerably improves the electrical characteristics of back-gated transistors. By avoiding ambient exposure and layer oxidation, contact resistance can be reduced and intrinsic mobility increased by 50%.

Publication year:2017

BOF-keylabel:yes

IOF-keylabel:yes

BOF-publication weight:1

CSS-citation score:2

Authors from:Government, Higher Education

Accessibility:Closed