A Wideband Class-AB Power Amplifier With 29-57-GHz AM-PM Compensation in 0.9-V 28-nm Bulk CMOS

© 1966-2012 IEEE. A wideband amplitude to phase (AM-PM) compensated class-AB power amplifier (PA) suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm CMOS without RF ultra-thick top metal. Design techniques to realize broadband impedance transformation, power division/combining, and phase distortion linearization are discussed. Further, second-order effects due to practical layout constrains imposed by deep-scaled technologies are addressed and simple design solutions are proposed. The designed PA shows a measured. The measured 15.1 dBm over >56%, with a peak power added efficiency of 24.2%. When a signal with wide modulation BW is applied, the realized PA enables up to 10.1-, 8.9-, and 5.9-dBm average while amplifying a 1.5-, 3-, and 6-Gb/s 64-quadratic-amplitude modulation, respectively, at 34 GHz. The in-band and out-of-band linearity measured in error vector magnitude and adjacent channel power ratio are always better than -25 dB and -30 dBc, respectively, without any digital pre-distortion.

Publication year:2018

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BOF-publication weight:3

CSS-citation score:4

Authors from:Higher Education