Effects of annealing on the structural properties of indium rich InGaN films

Indium rich (In-rich) InGaN films were grown on Ge (111) substrate by plasma assisted molecular beam epitaxy with thin GaN as a buffer layer. The effects of annealing temperature and annealing time on the structural properties of In-rich InGaN films were investigated by X-ray diffraction (XRD). XRD results indicate that the as-grown InGaN films annealed at different temperatures for 1 min and 1 h respectively did not improve the film crystalline quality. But with the annealing at 750 C and 800 C for 1 min respectively the metallic indium was desorbed from the InGaN structure. The InGaN films annealed at higher than 660 C for 1 h also showed the indium desorption. The InGaN film has the best film quality after annealed at 660 C for 6 h with the full-width at half-maximum of InGaN (002) peak to be 879 arcsec. The InGaN crystalline quality started to degrade after annealed at the temperatures higher than 660 C for 6 h. © 2014 Springer Science+Business Media New York.

Publication year:2014

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Authors:International

Authors from:Government, Higher Education