Schottky barrier modulation using ultrathin MgO for metal-silicon (100) contacts

© 2014 The Japan Society of Applied Physics. In this work, ultrathin MBE-grown MgO has been employed as a thin tunneling interlayer to modulate the Schottky barrier height (SBH) between metal contacts and Si substrates. The ultrathin MgO films were grown with different starting first monolayers (O2, MgO, and Mg) on Si. With an MgO ultrathin film, all contacts show rectifying behavior for both n- and p-type Si. The SBH generally increases (decreases) with increasing metal work function for n-type (and p-type) and is generally lowest for the oxygen first treatment. To our knowledge it is the first time that the role of the first monolayer of an oxide tunnel barrier on the SBH is revealed. These results indicate a novel, interesting way to modulate the barrier height and hence the contact resistivity in CMOS devices.

Publication year:2014

BOF-keylabel:yes

IOF-keylabel:yes

BOF-publication weight:0.5

CSS-citation score:1

Authors from:Higher Education

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