Magnetism of two-dimensional electron systems modified by ion implantation

Magnetically doped two-dimensional (2D) materials are potential candidates for application in future spintronic devices. Here, we want to understand the formation mechanisms and stability of local magnetic moments in 2D graphene and transition metal dichalcogenides. The magnetic moments are induced by doping with dilute atoms, using ultra-low energy ion implantation (tens of eV). Both moments induced in 2D monolayers as well as moments induced in between the layers of bilayer material are investigated. We rely on spin resolved tunneling microscopy and on magnetometry in a magnetic field for revealing the magnetism resulting from the presence of the dopant atoms, focusing in particular also on the influence of interaction between magnetic moments. On the other hand, magnetoresistance measurements as a function of temperature and magnetic field will allow identifying the influence of the dopant atoms on the spin lifetime of the 2D charge carriers.

Keywords:ion implantation, 2D materials, magnetism, scanning tunneling microscopy, spintronics

Disciplines:Condensed matter physics and nanophysics