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Researcher
Hiroaki Arimura
- Disciplines:Sensors, biosensors and smart sensors, Other electrical and electronic engineering, Nanotechnology, Design theories and methods
Affiliations
- Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 31 Aug 2013 - ESAT - MICAS, Microelectronics and Sensors (Division)
Member
From1 Sep 2011 → 31 Aug 2013
Publications
1 - 10 of 21
- On and off state Hot Carrier reliability in Junctionless high-K MG gate-all-around nanowires(2015)
Authors: Geert Hellings, Hiroaki Arimura, Jacopo Franco
Pages: 366 - 369 - Dynamic threshold voltage influence on Ge pMOSFET hysteresis(2015)
Authors: Hiroaki Arimura, Cor Claeys
Pages: 1 - 4 - Si-cap-free SiGe p-channel Fin FETS and gate-all-around transistors in a replacement metal gate Process: interface trap density reduction and performance improvement by high-pressure deuterium anneal(2015)
Authors: Hiroaki Arimura, Jacopo Franco, Diana Tsvetanova
Pages: 142 - 143 - Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stack(2015)
Authors: Hiroaki Arimura, Cor Claeys
Pages: 1 - 4 - Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation(2015)
Authors: Hiroaki Arimura, Johan Meersschaut, Jacopo Franco, Marc Heyns
Pages: 588 - 591 - Low frequency noise characterization of GeOx passivated Germanium MOSFETs(2015)
Authors: Hiroaki Arimura, Cor Claeys
Pages: 2078 - 2083 - The assessment of border traps in high-mobility channel materials(2015)
Authors: Ali Reza Alian, Hiroaki Arimura, Cor Claeys
Pages: 205 - 217 - BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities(2014)
Authors: Guido Groeseneken, Jacopo Franco, Ali Reza Alian, Hiroaki Arimura, Niamh Waldron, Marc Heyns
Pages: 828 - 831 - Thermal and plasma treatments for improved (sub-)1nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme(2014)
Authors: Hiroaki Arimura
- Improved channel hot carrier reliability in p-FinFETs with replacement metal gate by a nitrogen post deposition anneal process(2014)
Authors: Hiroaki Arimura, Jae Woo Lee, Guido Groeseneken
Pages: 408 - 412