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Project
2 D FUN: realization of future MOSFET devices. (2 D FUN)
The ultra small dimensions of graphene and 2D structures in combination with its extreme glowiness and virtual absence of surface defects makes these materials and their heterostructures ideal for the realization of future MOSFET devices.
Date:1 Jan 2016 → 31 Dec 2018
Keywords:2 D FUN
Disciplines:Condensed matter physics and nanophysics