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Researcher
Xiangdong Li
- Disciplines:Nanotechnology, Sensors, biosensors and smart sensors, Other electrical and electronic engineering, Design theories and methods
Affiliations
- Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 31 Dec 2020 - ESAT - MICAS, Microelectronics and Sensors (Division)
Member
From25 Feb 2016 → 31 Jul 2020
Projects
1 - 1 of 1
- Reliability and Integration of GaN Power Devices and Circuits on GaN-on-SOIFrom24 Feb 2017 → 24 Nov 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 10 of 16
- Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates(2020)
Authors: Xiangdong Li, Guido Groeseneken
Pages: 534 - 538 - Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization(2020)
Authors: Xiangdong Li, Zhicheng Wu, Guido Groeseneken
Pages: 577 - 580 - Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications(2020)
Authors: Xiangdong Li
Pages: 595 - 599 - Influence of Driver Integration on GaN Enhancement Mode Transistor Performance(2020)
Authors: Martijn Deckers, Johan Driesen, Simon Ravyts, Xiangdong Li
Pages: 480 - 485Number of pages: 6 - Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process(2019)
Authors: Xiangdong Li
- Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates(2019)
Authors: Xiangdong Li, Guido Groeseneken
Pages: 1499 - 1502 - 650 V p-GaN Gate Power HEMTs on 200 mm Engineered Substrates(2019)
Authors: Xiangdong Li
Pages: 297 - 301Number of pages: 5 - Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI(2019)
Authors: Xiangdong Li, Shuzhen You, Guido Groeseneken
Pages: 553 - 560 - Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process(2018)
Authors: S Stoffels, K Geens, Xiangdong Li, D Wellekens, Shuzhen You, M Zhao, M Borga, E Zanoni, G Meneghesso, M Meneghini, et al.
Pages: 1387 - 1394 - Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration(2018)
Authors: Xiangdong Li, Shuzhen You, Guido Groeseneken
Pages: 999 - 1002