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Publication

Nonlinear behavioral models of HEMTs using response surface methodology

Book Contribution - Book Chapter Conference Contribution

In this paper, the response surface methodology is proposed to model nonlinear microwave devices using different sampling techniques. Each of the methods represents a distinct approach: exploration-oriented (Voronoi tessellation), nonlinearity-exploitation-oriented (LOcal Linear Approximation) and model-error-minimization-oriented. This allows to build accurate and compact global behavioral models of drain voltage at different harmonics of a 0.15 mu m GaAs HEMT transistor with only few hundreds of samples. After choosing the best sampling technique, two types of global models are compared: Radial Basis Function and Kriging. It is shown that the modeling convergence depends on the model type, and better results are obtained using the Kriging model.
Book: 2014 INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC MODELING AND OPTIMIZATION FOR RF, MICROWAVE, AND TERAHERTZ APPLICATIONS (NEMO)
Pages: 1 - 4
ISBN:978-1-4799-2820-0
Publication year:2014
BOF-keylabel:yes
IOF-keylabel:yes
Accessibility:Open