Researcher
Jan Vanhellemont
- Disciplines:Condensed matter physics and nanophysics
Affiliations
- Department of Solid State Sciences (Department)
Member
From1 Feb 2009 → 13 Feb 2016
Publications
1 - 10 of 107
- In situ UHVEM study of {113}-defect formation in Si nanowires(2015)
Authors: Jan Vanhellemont, Satoshi Anada, Hidehiro Yasuda, Hugo Bender, Rita Rooyackers, Anne Vandooren
Pages: 49 - 49 - In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures(2015)Volume: 12
Authors: Jan Vanhellemont, S Anada, T Nagase, H Yasuda, H Bender, R Rooyackers, A Vandooren
Pages: 275 - 281 - Stress and doping impact on intrinsic point defects in silicon and germanium(2014)Volume: 1583
Authors: Jan Vanhellemont, Eiji Kamiyama, Koji Sueoka, A Cavallini, SK Estreicher
Pages: 8 - 12 - Temperature dependent internal friction behavior of single crystal germanium studied by the impulse excitation technique(2014)Volume: 64
Authors: Akhilesh Kumar Swarnakar, Omer Van der Biest, Jan Van Humbeeck, Jan Vanhellemont, DL Harame, M Caymax, M Heyns, G Masini, S Miyazaki, G Niu, et al.
Pages: 195 - 205 - Determination of the Si Young's modulus between room and melt temperature using the impulse excitation technique(2014)Volume: 11
Authors: Akhilesh K Swarnakar, Omer Van der Biest, Jan Vanhellemont, F Cristiano, P Pichler, C Tavernier, W Windl
Pages: 150 - 155 - Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals(2014)Volume: 205-206
Authors: Koji Sueoka, Eiji Kamiyama, Jan Vanhellemont, JD Murphy
Pages: 163 - 168 - Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon(2014)
Authors: Koji Sueoka, Eiji Kamiyama, Jan Vanhellemont
Number of pages: 1 - Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt(2014)Volume: 11
Authors: Eiji Kamiyama, Koji Sueoka, Jan Vanhellemont, F Cristiano, P Pichler, C Tavernier, W Windl
Pages: 85 - 88 - Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing(2014)Volume: 11
Authors: X Zhang, X Ma, C Gao, T Xu, J Zhao, P Dong, Jan Vanhellemont, F Cristiano, P Pichler, C Tavernier, et al.
Pages: 32 - 36 - Determination of the single crystal Ge Young’s modulus between room temperature and melting temperature using the impulse excitation technique(2014)Volume: 11
Authors: Akhilesh K Swarnakar, Omer Van der Biest, Jan Van Humbeeck, Jan Vanhellemont, S Pizzini, G Kissinger
Pages: 1566 - 1569