- A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1-xSnx(2020)
Authors: Anurag Vohra, Wilfried Vandervorst
- Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx(2020)
Authors: Anurag Vohra, Wilfried Vandervorst
- Low-Temperature Selective Growth of Heavily Boron-Doped Germanium Source/Drain Layers for Advanced pMOS Devices(2020)
Authors: Anurag Vohra, Johan Meersschaut
- Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration(2019)
Authors: Anurag Vohra
Pages: P392 - P399
- Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation(2019)
Authors: Anurag Vohra, Wilfried Vandervorst
- Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment(2019)
Authors: Anurag Vohra, Wilfried Vandervorst
- Evolution of phosphorus-vacancy clusters in epitaxial germanium(2019)
Authors: Anurag Vohra, Wilfried Vandervorst
- High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30nm LG(2019)
Authors: Anurag Vohra
Pages: T94 - T95
Number of pages: 2
- Epitaxial GeSn: impact of process conditions on material quality(2018)
Authors: Anurag Vohra
- Enhanced B doping in CVD-grown GeSn:B using B δ- doping layers(2018)
Authors: Anurag Vohra, Wilfried Vandervorst
Pages: 285 - 290